MASK CD-SEM supporting sub-2 nm node photomasks
In the lithography process for cutting-edge devices, which are becoming increasingly miniaturized and complex, the number of measurement points is rapidly increasing due to an increase in the number of masks required for multiple exposures and the sophistication of pattern shapes.
In addition, the introduction of Multi Beam Mask Writers and advances in high-performance computing technology have made it possible to design curved patterns and new measurement methods that take curvature into account are underway. With these developments, it has become more important than ever before to accurately identify minute differences between the pattern on the mask and the design data.
The E3660 provides highly accurate and high speed measurement while meeting the measurement needs of advanced masks and master templates for nanoimprinting, including EUV lithography, by offering SEM images with excellent reliability and reproducibility and unique measurement solutions.
