Capable of Testing Ultra-High-Speed DRAM Devices, Supporting Next-Generation GDDR7, LPDDR6, and DDR6 Technologies
Memory technologies are becoming more complex and faster to meet the growing demand for artificial intelligence (AI), high-performance computing (HPC), and edge applications. The T5801 Ultra-High-Speed DRAM Test System is a cutting-edge platform that supports the latest advancements in high-speed memory technologies, including GDDR7, LPDDR6, and DDR6.
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High-speed memory test performance up to 36Gbps PAM3 and 18Gbps NRZ
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FEU (Front End Unit) structure to achieve best-in-class signal integrity
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Full HW-based test functionalities for next-generation DRAMs (LPDDR6, GDDR7, DDR6) and memory modules (MRDIMM, CAMM)
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Flexible test cell infrastructure from engineering to production
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*PAM3, NRZ: A type of signaling system. PAM3 represents signals by three voltage levels, and NRZ does by two.
